Download 5th FORUM ON NEW MATERIALS PART C Proceedings of the 5th by Edited by Pietro VINCENZINI World Academy of Ceramics and PDF

By Edited by Pietro VINCENZINI World Academy of Ceramics and National Research Council, Italy Co-edited by Kunihito KOUMOTO, Nagoya University, Japan Nicola ROMEO, University of Parma,

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Extra info for 5th FORUM ON NEW MATERIALS PART C Proceedings of the 5th Forum on New Materials, part of CIMTEC 2010-12 th International Ceramics Congress and 5th Forum on New Materials Montecatini Terme, Italy, June 13-18, 2010

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44 (2005), p. 4275. [3] E. N. Nikitin and V. I. Tarasov: Fiz. Tverd. Tela Vol. 13 (1971), p. 3473. [4] Y. Saito, Y. Miyazaki, K. Hayashi, K. Yubuta and T. Kajitani: manuscript in preparation. [5] V. Petricek, M. Dusek and L. Palatinus: Jana2006, The crystallographic computing system, Institute of Physics, Praha, Czech Republic (2006). [6] K. Momma and F. Izumi: J. Appl. Cryst. Vol. 41 (2008), p. 653. [7] B. A. Simkin, A. Ishida, N. L. Okamoto, K. Kishida, K. Tanaka and H. Inui: Acta Mater. Vol.

Since the valence electron count per number of transition elements, VEC, is defined as VII(1-x) + IXx + IV for the present solid solution, the transition from p-type to n-type should be observed at VEC > 14 [7]. 06(1) should exhibit n-type conduction. In Fig. 3 we plot the temperature dependence of S (upper),  (middle) and power factor, S2 (lower), for the (Mn1-xCox)Si solid solution. 8 eV [1]. The observed highest S value is 247 μV/K at 527°C, being a typical value of the polycrystalline samples.

902. [4] Y. Nishino: Phys. Rev. B 63 (2001), p. 233303. [5] H. Matsuura, Y. Nishino, U. Mizutani, S. Asano: J. Jpn. Inst. Metals 66 (2002), p. 767. [6] Y. Nishino, S. Deguchi, U. Mizutani: Phys. Rev. B 74 (2006), p. 115115. [7] C. S. F. Y. Lin, Y. T. Yu, Y. K. Kuo: Phys. Rev. B 75 (2007), p. 064204. [8] M. Mikami, K. Kobayashi, T. Kawada, K. Kubo, N. Uchiyama: Jpn. J. Appl. Phys. 47 (2008), p. 1512. [9] M. Mikami, A. Matsumoto, K. Kobayashi: J. Alloy. Compd. 461 (2008), p. 423. [10] M. Mikami, S.

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