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By Saket Anand, Sushil Mittal, Oncel Tuzel, Peter Meer

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If SAED patterns are to be used to identify unknown phases it is again necessary, as for magnification, either to standardize the specimen height by reference to the objective lens current or else to produce another calibration chart. Moreover, it seems that there is often considerable astigmatism in the diffraction pattern, particularly for objective lenses under strong excitation conditions. This is probably best corrected by irradiating a comparatively large area of sample (say 10-20 ^m) and then switching to the diffraction pattern mode but without the customary selected area aperture.

A. (1980). Optik 57, 9. R. W. (1971). Philos. Mag. 24, 139. Colliex, C (1984). Adv. Opt. Electron. Microsc. 9, 65. E. (1980). Proc. R. Soc. (London), Ser. A 370, 1. M. (1969). Appl. Phys. Lett. 15, 58. M. (1973). Ada Crystallogr. A 29, 529. M. (1981). "Diffraction Physics", 2nd Edn. North-Holland, Amsterdam. Cowley, J. M. (1986a). J. Electron Microsc. Technique 3, 25. M. (1986b). Progr. Surf. Sei. 21, 209. M. F. (1957a). Acta Crystallogr. 10, 609. M. F. (1957b). Proc. Phys. Soc. 70,486. Creek, R.

1972). J. Appl. Phys. 43, 2185. L. and Smith, DJ. (1982). J. E 15, 1351. , Van Tendeloo, G. and Van Landuyt, J. (1985). Ultramicroscopy 18, 395. , Honda, T. and Harada, Y. (1984). Jpn. J. Appl Phys. 23, L414. W. and Markham, R. (1972). In: "Practical Methods in Electron Microscopy, Vol. 1" (A. ), p. 1-444, North-Holland, Amsterdam. N. (1957). Br. J. Appl. Phys. 8, 83. Boersch, H. (1954). Z. Phys. 139, 115. L. and Naruse, M. (1980). In: "Electron Microscopy and Analysis, 1979" (T. ), p. 445, Institute of Physics, Bristol.

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